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| Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Hochstzulassige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Kollektor Dauergleichstrom DC collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power dissipation Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral It value Isolations Prufspannung insulation test voltage tp= 1ms VR= 0V, tp= 10ms, Tvj= 125C RMS, f= 50Hz, t= 1min. Tvj= 25C Tc= 80C Tc= 25C tp= 1ms, Tc= 80C Tc= 25C, Transistor VCES IC, nom IC ICRM Ptot VGES IF IFRM It VISOL 1200 300 480 600 V A A A 1470 W +/- 20 V 300 A 600 A 19 k As 2,5 kV Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sattigungsspannung collector emitter saturation voltage Gate Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor Emitter Reststrom collector emitter cut off current Gate Emitter Reststrom gate emitter leakage current IC= 300A, VGE= 15V, Tvj= 25C IC= 300A, VGE= 15V, Tvj= 125C IC= 12mA, VCE= VGE, Tvj= 25C VGE= -15V...+15V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V VCE= 1200V, VGE= 0V, Tvj= 25C VCE= 0V, VGE= 20V, Tvj= 25C VCEsat VGE(th) QG Cies Cres ICES IGES min. 5,0 typ. 1,7 2,0 5,80 max. 2,15 6,50 V V V - 2,80 - C 21 nF 0,85 nF - - 5 mA - - 400 nA prepared by: MOD-D2; Mark Munzer approved: SM TM; Wilhelm Rusche date of publication: 2002-10-02 revision: 3.0 1 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter IC= 300A, VCC= 600V Einschaltverzogerungszeit (induktive Last) turn on delay time (inductive load) VGE= 15V, RG= 2,4, Tvj= 25C VGE= 15V, RG= 2,4, Tvj= 125C IC= 300A, VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE= 15V, RG= 2,4, Tvj= 25C VGE= 15V, RG= 2,4, Tvj= 125C IC= 300A, VCC= 600V Abschaltverzogerungszeit (induktive Last) turn off delay time (inductive load) VGE= 15V, RG= 2,4, Tvj= 25C VGE= 15V, RG= 2,4, Tvj= 125C IC= 300A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data Modulinduktivitat stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip Tc= 25C VGE= 15V, RG= 2,4, Tvj= 25C VGE= 15V, RG= 2,4, Tvj= 125C IC= 300A, VCC= 600V, L= 80nH VGE= 15V, RG= 2,4, Tvj= 125C IC= 300A, VCC= 600V, L= 80nH VGE= 15V, RG= 2,4, Tvj= 125C tP 10s, VGE 15V, TVj 125C VCC= 900V, VCEmax= VCES - LCE *di/dt Eon Eoff ISC LCE RCC/EE tf 0,13 0,18 25 s s mJ td,off 0,55 0,65 s s tr 0,09 0,10 s s td,on 0,25 0,30 s s min. typ. max. - 44 - mJ - 1200 - A - 20 - nH - 0,7 - m Charakteristische Werte / characteristic values Inversdiode / free-wheel diode Durchlassspannung forward voltage Ruckstromspitze peak reverse recovery current IF= 300A, VGE= 0V, Tvj= 25C IF= 300A, VGE= 0V, Tvj= 125C IF= 300A, -diF/dt= 3000A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Sperrverzogerungsladung recovered charge IF= 300A, -diF/dt= 3000A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Ausschaltenergie pro Puls reverse recovery energy IF= 300A, -diF/dt= 3000A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Erec 14 26 mJ mJ Qr 30 56 C C IRM 210 270 A A VF 1,65 1,65 2,15 V V 2 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Charakteristische Werte / characteristic values Chopperdiode / chopper diode Durchlassspannung forward voltage Ruckstromspitze peak reverse recovery current IF=400A, VGE= 0V, Tvj= 25C IF= 400A, VGE= 0V, Tvj= 125C IF=400A, -diF/dt= 4000A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Sperrverzogerungsladung recovered charge IF=400A, -diF/dt= 4000A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Ausschaltenergie pro Puls reverse recovery energy IF=400A, -diF/dt= 4000A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Erec 18 34 mJ mJ Qr 40 75 C C IRM 280 360 A A VF 1,65 1,65 2,1 V V Thermische Eigenschaften / thermal properties Transistor Wechelr. / transistor inverter Innerer Warmewiderstand; DC thermal resistance, junction to case; DC Ubergangs Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemp. maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Inversdiode / free wheel diode Chopper Diode / chopper diode pro Modul / per module Paste= 1W/m*K / grease= 1W/m*K RthCK Tvj max Tvj op Tstg RthJC 0,010 0,085 0,150 0,125 K/W K/W K/W K/W - - 150 C -40 - 125 C -40 - 125 C Mechanische Eigenschaften / mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation CTI comperative tracking index Anzugsdrehmoment, mech. Befestigung mounting torque Anzugsdrehmoment, elektr. Anschlusse terminal connection torque Gewicht weight Schraube M6 / screw M6 M 3,0 Al2O3 425 - 6,0 Nm Anschlusse / terminals M6 M 2,5 - 5,0 Nm G 340 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 3 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 IC= f(VCE) VGE= 15V Ausgangskennlinie (typisch) output characteristic (typical) 600 500 400 IC [A] 300 200 100 0 0,0 0,5 1,0 1,5 VCE [V] 2,0 2,5 3,0 3,5 Tvj = 25C Tvj = 125C Ausgangskennlinienfeld (typisch) output characteristic (typical) 600 500 400 IC [A] 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 VCE [V] 3,0 VGE=19V VGE=17V VGE=15V VGE=13V VGE=11V VGE=9V IC= f(VCE) Tvj= 125C 3,5 4,0 4,5 5,0 4 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 IC= f(VGE) VCE= 20V Ubertragungscharakteristik (typisch) transfer characteristic (typical) 600 500 400 IC [A] 300 200 100 0 5 6 7 8 9 VGE [V] 10 Tvj=25C Tvj=125C 11 12 13 Durchlasskennlinie der Dioden (typisch) forward caracteristic of diodes (typical) IF= f(VF) 600 525 IF [A] of inverse diode 450 375 300 225 150 75 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 VF [V] 1,4 1,6 1,8 2,0 2,2 2,4 Tvj = 25C Tvj = 125C 800 700 600 500 400 300 200 100 0 IF [A] of chopper diode 5 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) VGE=15V, RG=2,4, VCE=600V, Tvj=125C Schaltverluste (typisch) Switching losses (typical) 90 80 70 60 E [mJ] 50 40 30 20 10 0 0 100 200 Eon Eoff Erec 300 IC [A] 400 500 600 Schaltverluste (typisch) Switching losses (typical) 180 160 140 120 E [mJ] 100 80 60 40 20 0 0 4 8 Eon Eoff Erec Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V, IC=300A, VCE=600V, Tvj=125C 12 RG [] 16 20 24 28 6 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 ZthJC = f (t) Transienter Warmewiderstand Transient thermal impedance 1 ZthJC [K/W] 0,1 Zth : IGBT 0,01 Zth : Inversdiode Zth : Diode Chopper 0,001 0,001 0,01 t [s] 0,1 1 i ri [K/kW] : IGBT i [s] : IGBT ri [K/kW] : Inversdiode i [s] : Inversdiode ri [K/kW] : Chopper Diode i [s] : Chopper Diode 1 35,73 6,499E-02 62,99 6,499E-02 52,51 6,499E-02 2 42,82 2,601E-02 75,66 2,601E-02 63,02 2,601E-02 3 4,84 2,364E-03 8,52 2,364E-03 7,10 2,364E-03 4 1,61 1,187E-05 2,83 1,187E-05 2,37 1,187E-05 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 700 600 500 IC [A] 400 300 200 100 0 0 200 400 600 VCE [V] 800 IC,Chip IC,Modul VGE=15V, Tvj=125C, RG=2,4 1000 1200 1400 7 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Gehausemae / Schaltbild Package outline / Circuit diagram Kriechstrecke creepage distance Luftstrecke clearance distance 20 mm 11 mm 8 (8) DB_FD300R12KE3_3.0 2002-10-02 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". |
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